semisouth silicon carbide technology

Custom

SemiSouth offers a unique capability to our customers through the ability to develop custom SiC power discretes, SiC circuit protection devices, SiC modules and simple SiC ICs for their specific application utilizing SemiSouth's Silicon Carbide (SiC) technology. We can provide a turnkey solution to customers needing the intrinsic high-efficiency properties of SiC. SemiSouth believes that SiC-based semiconductor devices offer significant advantages over competing products based on silicon, GaAs and other materials for certain electronic applications. Furthermore, products based on SiC provide up to an order of magnitude improvement in performance in technical applications where silicon is already approaching theoretical limits. For these reasons, SemiSouth believes that SiC products will enable essential technical performance that, in turn, allows customers to develop and market new and competitive products.

Capabilities

  • Custom power discrete devices based upon our:
    • Vertical JFET technology for power switching or circuit protection
    • Schottky rectifier technology for zero recovery
    • Junction Barrier Schottky technology with surge capability
    • Static Induction Transistors (SIT) technology for power RF
    • PiN Diode and thyristor Technology for high voltage
  • Custom power modules using our standard or custom power discrete devices
    • Up to 100 kW+
  • Simple analog and digital ICs utilizing SemiSouth’s patent-pending ability to integrate lateral and vertical FET and Schottky technologies monolithically
  • Devices capable of up to 10 kV breakdown or blocking voltage

Product Development

SemiSouth engineers, including our industry-recognized PhDs, will work directly with the customer through conception, feasibility, development, verification and optimization. SemiSouth believes that it is important that we fully understand the customer’s application challenge and provide a turnkey solution that fully leverages the inherent properties of silicon carbide.

We start with our Application Engineers helping the customer understand what benefits SiC can provide to the customer’s application and how the application design might be optimized to take advantage of these properties. We help our customers change the way they think about their designs. Our Device Engineers and Physicists will harness their many years of SiC process and design experience to design the appropriate discrete device or IC that provides the optimal solution. Following product design, fabrication, and test, prototype units will be delivered to the customer with a detailed report from our engineers that details the performance of the device and its ability to meet or exceed the design criteria. Our Application Engineers and Design Engineers are available to the customer throughout the prototype verification process to help answer any questions or provide any assistance. Once verified and accepted, SemiSouth has access to leading third-party power package assembly companies and full military assembly and test services to provide your production units in the specific type of package and screening requirement that your application requires. We provide a full-service turnkey solution.

Packaging & Test Capabilities

  • Die in waffle pack
  • Through hole and surface-mount plastic power packages optimize for thermal conductivity
  • Ceramic and metal packaging for high-temperature or harsh-environment applications
  • MIL-STD-750, MIL-STD-883 and Class S screening

Military & Aerospace

SemiSouth Hi-Rel products are offered as bare die and in a variety of all-metal, hermitically sealed packages with MIL-STD-750 screening available.

In support of Hi-Rel applications, SemiSouth offers an expanding line of SiC power transistors and switches. Typical applications include:

  • High-frequency power conditioning
    • Reduced switching losses
    • Smaller passive components for reduced system volume and weight
  • High-temperature power conditioning
    • Reduced device cooling requirements (Tj > 225 °C)
  • High-voltage power conditioning
    • Reduced voltage drop for unipolar devices
    • Increased switching frequency for unipolar devices
  • Rad-hard power conditioning
    • Inherent radiation-tolerant material
    • Eliminate shielding requirements
  • Surge suppression
    • Increased power density